Hiroshi Amano
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OrganizationNagoya University
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Biography
~He received BE, ME and DE in 1983, 1985 and 1989 from Nagoya University. From 1988 till 1992, he was a research associate of Nagoya University. In 1992, he moved to Meijo University. In 2010, he moved to the Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University where he is currently a Professor.
He joined professor Isamu Akasaki’s group in 1983 as an undergraduate course student. Since then, he has been doing research on the growth and device application of group III semiconductors. In 1985, he developed low-temperature deposited buffer layers which provided the technology vendors to the development of high-quality group III semiconductor based LEDs and LDs. In 1989, he succeeded in growing p-type GaN and fabricating p-n junction light emitting diode for the first time in the world.
He has authored and co-authored in total more than 450 technical papers and contributed to 20 books. His work has brought several awards such as (1) 1994 Optoelectronics Conference Special Award, (2) 1996 IEEE/LEOS Engineering Achievement Award, (3) 1998 Japan Society for Applied Physics C Award, (4) 1998 Rank Award, (5) 2001 Marubun Academic Award, (6) 2002 Takeda Award and (7) 2003 Solid State Devices and Materials Conference Paper Award, (8)Nistep Researcher, MEXT.