nMOSFET RF and noise model on standard 45nm SOI technology
01 Jan 2017 | Contributor(s): Yanfei Shen, Saeed Mohammadi | doi:10.4231/D3833N04K
A compact scalable model suitable for predicting high frequency noise and nonlinear behavior of N-type Metal Oxide Semiconductor (NMOS) transistors is presented.
Double-Clamped Silicon NEMS Resonators Model
22 Feb 2016 | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N
This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.
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