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    Samarth Agarwal got a PhD. in Physics from Purdue University in 2010. His work involved band-gap engineering for solar cells and exploring novel devices for reduction in power consumption of transistors. He received his Bachelor of Technology degree in Engineering Physics from IIT, Bombay in 2004 and M.S. in Physics from Purdue University in 2006. He currently works at IBM's Semiconductor Research and Development Center in Bangalore, India. Related publications: -Agarwal, S.; Klimeck, G.; Luisier, M.; , "Leakage-Reduction Design Concepts for Low-Power Vertical Tunneling Field-Effect Transistors," Electron Device Letters, IEEE , vol.31, no.6, pp.621-623, June 2010, -Samarth Agarwal, Kyle H. Montgomery, Timothy B. Boykin, Gerhard Klimeck, and Jerry M. Woodall, Design Guidelines for True Green LEDs and High Efficiency Photovoltaics Using ZnSe/GaAs Digital Alloys Electrochem. Solid-State Lett. 13, H5 (2010), -Samarth Agarwal, Michael Povolotskyi, Tillmann Kubis and Gerhard Klimeck, Adaptive quadrature for sharply spiked integrands, Journal of Computational Electronics Volume 9, Numbers 3-4, 252-255, -Kyle Montgomery, Samarth Agarwal, Gerhard Klimeck, and Jerry Woodall, Proposal of ZnSe/GaAs Digital Alloys for High Band Gap Solar Cells and True Green LEDs, IEEE Nanotechnology Materials and Devices Conference (NMDC 2009), June 2-5, 2009, Traverse City, Michigan, USA., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.