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Intel's Gargini sees tunnel FET as transistor option
02 Mar, 2011 @ 11:06 PM
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GRENOBLE France – Paolo Gargini, Intel Fellow and chairman of the International Technology Roadmap for Semiconductors (ITRS) used a talk at the Industry Strategy Symposium Europe held here by the SEMI industry organization, to discuss the prospect of a field effect transistor combined with … Continue reading →
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