
Worked Examples for Carrier Statistics (advanced)
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Two worked out examples based on FermiDirac Vs MaxwellBoltzmann statistics and temperature effects are presented.

3D wavefunctions
12 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
In quantum mechanics the timeindependent Schrodinger's equation can be solved for eigenfunctions (also called eigenstates or wavefunctions) and corresponding eigenenergies (or energy levels) for a stationary physical system. The wavefunction itself can take on negative and positive values and could be complex.
The square magnitude of the wavefunction is the probability density of finding the particle in space at that particular energy level.
A quantum dot is a physical system that …

ABACUS: Test for BJT lab Tool
06 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenging problem.

ABACUS: Test for Carrier Statistics Tool
10 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

ABACUS: Test for Drift Diffusion Lab
12 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

ABACUS: Test for MOSCAP Tool
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

ABACUS: Test for MOSFET Tool
18 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

BJT Lab
06 Feb 2008  Tools  Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.

BJT Lab  Amplifier
31 Jan 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra
This real life problem designs and calculates the AC amplification ratio for a CommonEmitter configuration npn type BJT.

BJT Lab Worked Out Problem 1
01 Feb 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra
This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.

BJT Lab Worked Out Problem 2
02 Feb 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra
This sample worked out problem simulated a pnp type BJT in Common Base configuration and calculates AC and DC amplification ratios.

BJT Lab: FirstTime User Guide
15 Jun 2009  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley
This firsttime user guide provides introductory material to BJT on nanoHUB. It includes a tour of the Rappture interface, which notes key inputs and typical outputs, and an introduction to the workings of NPN and PNP type BJT. We discuss the default simulation (what happens if you don't change any inputs, and just hit "Simulate") as well as the limitations of the tool. Provided also are a few examples that allow the users to understand the scope of the tool. Lastly, we offer final comments …

Buckyball C60
16 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
A fullerene is any molecule composed entirely of carbon, and can take the form of hollow spheres, ellipsoids, or tubes. Spherical fullerenes (often referred to as "buckyballs") are one of the known structurally different form of carbon. C60 are the most common of buckyball structures. …

Calculation of the Matrix Elements for Alloy Scattering
31 Dec 2012  Papers  Contributor(s): Saumitra Raj Mehrotra
An appendix to the paper "Atomistic approach to alloy scattering in Si1−xGex," Appl. Phys. Lett. 98, 173503 (2011).
It involves the generic derivation for the matrix element calculation for the alloy disorder scattering.

Carbon nanotube bandstructure
22 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into singlewalled nanotubes (SWNT) and multiwalled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology applications, including electronics, optics and other fields of materials science.
Because of its unique symmetry the structure of a singlewalled nanotube will strongly affect its electrical properties. For a …

Carrier Statistics  Temperature Effects
10 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Silicon (Si), Germanium (Ge) and GalliumArsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.
The goal in this test is to calculate the temperature range of device operation using Si,Ge and GaAs materials.

Carrier Statistics Lab
08 Jan 2008  Tools  Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Calculate the electron & hole density in semiconductors

Carrier Statistics Lab Video Demonstration
23 Sep 2010  Animations  Contributor(s): Saumitra Raj Mehrotra
This video shows:
Basic input deck for the tool,
Simulation run of Temperature sweep with constant fermi level,
Simulation run of Temperature sweep with constant doping.

Carrier Statistics Lab: FirstTime User Guide
09 Mar 2009  Teaching Materials  Contributor(s): Abhijeet Paul, Gerhard Klimeck, Benjamin P Haley, Saumitra Raj Mehrotra
This firsttime user guide is an introduction to the Carrier Statistics Lab . It provides basic definitions, guidance on how to run the tool, and suggested exercises to help users get accustomed to the idea of distribution functions as well as how these functions are used in determining the carrier concentration and fermilevel in some of the common semiconductors. If you have any suggestions for improvements or corrections, feel free to contact us.
NCN@Purdue

Carrier Statistics Tool Verification
10 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This test verifies the Carrier Statistics Tool by comparing the numerically computed and analytically extracted, electron and hole carrier densities. The results are close within 2% of margin.

Crystal Viewer Tool Video Demonstration
14 Dec 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz
This video shows the use of the Crystal Viewer Tool to visualize several material/crystal systems. The examples demonstrated will provide a firsttime user with a basic understanding of how the tool works.

CV profile with different oxide thickness
20 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
CV (or capacitancevoltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. CV testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.
CV measurements can reveal oxide thickness, oxide charges, contamination from mobile ions, and interface trap density in wafer processes. In this image the CV profile for a bulk ptype substrate MOSCAP with different …

Diffusion of holes and electrons
15 Apr 2010  Animations  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
Diffusion is a process of particles distributing themselves from regions of high to low concentrations. In semiclassical electronics these particles are the charge carriers (electrons and holes). The rate at which a carrier can diffuse is called diffusion constant with units of cm2/s. The image shows the process of steady state diffusion in an intrinsic semiconductor bar with different light shining intensity (different carrier generations rates /cm3) at the center of the bar. …

Drift Diffusion  Temperature Sensor
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.

Drift Diffusion Lab Worked out problems (Diffusion)
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A sample problem is worked out using DriftDiffusion lab. The problem statement deals with the concept of diffusion in semiconductors.