PN Junction Lab

12 Sep 2005 | Tools | Contributor(s): Dragica Vasileska, Matteo Mannino, Michael McLennan, Xufeng Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Benjamin P Haley

This tool enables users to explore and teach the basic concepts of P-N junction devices.

Crystal Viewer Tool

22 Dec 2007 | Tools | Contributor(s): Saumitra Raj Mehrotra, Michael Povolotskyi, Sebastian Steiger, Tillmann Christoph Kubis, Abhijeet Paul, Xingshu Sun, Victoria Savikhin, Gerhard Klimeck

Visualize different crystal lattices and planes

MOSFet

30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

MOSCap

06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

Capacitance of a MOS device

Carrier Statistics Lab: First-Time User Guide

05 Mar 2009 | Teaching Materials | Contributor(s): Abhijeet Paul, Gerhard Klimeck, Benjamin P Haley, Saumitra Raj Mehrotra

This first-time user guide is an introduction to the Carrier Statistics Lab . It provides basic definitions, guidance on how to run the tool, and suggested exercises to help users get accustomed to the idea of distribution functions as well as how these functions are used in determining the …

PN Junction Lab: First-Time User Guide

13 Jun 2009 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Benjamin P Haley

This first-time user guide provides introductory material to PN Junction Lab on nanoHUB. The introduction to PN junctions is followed by a tour of the Rappture interface, which notes key inputs and typical outputs. We discuss the default simulation (what happens if you don't change any inputs, and …

Drift-Diffusion Lab

22 Jan 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Gloria Wahyu Budiman

Simulate single semiconductor characteristics

Carrier Statistics Lab

08 Jan 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck

Calculate the electron & hole density in semiconductors

Nanowire

19 May 2006 | Tools | Contributor(s): Hong-Hyun Park, Lang Zeng, Matthew Buresh, Siqi Wang, Gerhard Klimeck, Saumitra Raj Mehrotra, Clemens Heitzinger, Benjamin P Haley

Simulate 3D nanowire transport in the effective mass approximation with phonon scattering and 3D Poisson self-consistent solution

BJT Lab

06 Feb 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman

This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.

Homework Exercise on Bipolar Junction Transistors

30 Mar 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck

The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is …

Homework Exercise on Drift & Diffusion in Bulk Semiconductors

30 Mar 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light.NCN@Purdue

Resonant Tunneling Diode operation

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and …

Buckyball C60

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

A fullerene is any molecule composed entirely of carbon, and can take the form of hollow spheres, ellipsoids, or tubes. Spherical fullerenes (often referred to as "buckyballs") are one of the known structurally different form of carbon. C60 are the most common of buckyball structures. …

3D wavefunctions

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

In quantum mechanics the time-independent Schrodinger's equation can be solved for eigenfunctions (also called eigenstates or wave-functions) and corresponding eigenenergies (or energy levels) for a stationary physical system. The wavefunction itself can take on negative and positive values and …

Electronic band structure

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

In solid-state physics, the electronic band structure (or simply band structure) of a solid describes ranges of energy in which an electron is "forbidden" or "allowed". The band structure is also often called the dispersion or the E(k) relationship. It is a mathematical relationship between the …

Carbon nanotube bandstructure

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology applications, …

Homework Exercise on Fermi-Dirac and Maxwell-Boltzmann Distributions

24 Jan 2008 | Teaching Materials | Contributor(s): Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

The tutorial questions based on Carrier Statistics Lab v1.0 available online at Carrier Statistics Lab. Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study …

Graphene nanoribbon bandstructure

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Graphene nanoribbons (often abbreviated as GNR) are planar strips of graphene with a thickness of approximately one atom. Carbon atoms in graphene are sp2-hybridized with a carbon-carbon bond length of approximately 0.142 nm. As an electronic material, graphene exhibits many desirable properties, …

Nanowire: First-Time User Guide

05 May 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra

Nanowire is a simulation tool for silicon nanowire FET's in the nanometer regime (diameter

OMEN Nanowire

02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

Full-band 3D quantum transport simulation in nanowire structure

PN junction in forward bias

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

A PN junction is formed by joining p-type and n-type doped semiconductors together in very close contact. The p- and n-type semiconductors are conducting because of the available free carriers. However, because the carriers diffuse into the adjoining p and n regions by a process called …

Threshold voltage in a nanowire MOSFET

09 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck

Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be …

Diffusion of holes and electrons

10 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Diffusion is a process of particles distributing themselves from regions of high- to low- concentrations. In semi-classical electronics these particles are the charge carriers (electrons and holes). The rate at which a carrier can diffuse is called diffusion constant with units of cm2/s. The image …

Fermi-Dirac statistics with temperature

10 Apr 2010 | Animations | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Fermi-Dirac statistics is applied to identical particles with half-integer spin (such as electrons) in a system that is in thermal equilibrium. Since particles are assumed to have negligible mutual interactions, this allows a multi-particle system to be described in terms of single-particle energy …