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BJT Lab Worked Out Problem 2

02 Feb 2011 | Contributor(s): Saumitra Raj Mehrotra

This sample worked out problem simulated a pnp type BJT in Common Base configuration and calculates AC and DC amplification ratios.

BJT Lab Worked Out Problem 1

01 Feb 2011 | Contributor(s): Saumitra Raj Mehrotra

This sample worked out problem analyzes the output characteristic curves of an npn BJT transistor and extracts the relevant parameters.

BJT Lab - Amplifier

31 Jan 2011 | Contributor(s): Saumitra Raj Mehrotra

This real life problem designs and calculates the AC amplification ratio for a Common-Emitter configuration npn type BJT.

MOSCAP CV profiling

05 Jan 2011 | Contributor(s): Saumitra Raj Mehrotra

This real life problem based on MOSCAP allows one to understand the usage of CV profiling of MOS type of devices.

MOSFET Lab - Scaling

03 Jan 2011 | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

The concept of device scaling and the need to control short channel effects is used in this real life problem

MOSFET Worked out problems 1

06 Dec 2010 | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

Test for Quantum Dot Lab tool

09 Nov 2010 | Teaching Materials | Contributor(s): SungGeun Kim, Saumitra Raj Mehrotra

This test is aimed at self-learning students or instructors who may be engaged in teaching classes related to the quantum dot lab tool.The level of this test should not be difficult for a student who has gone through "the general tutorial to quantum dots,""the introductory tutorial to the...

ABACUS: Test for MOSFET Tool

18 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the MOSFET Tool

11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

ABACUS: Test for BJT lab Tool

06 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...

Verification of the Validity of the BJT Tool

24 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

MOSCAP Worked out problems (Basic)

19 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

Drift Diffusion Lab Worked out problems (Drift)

18 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.

Drift Diffusion Lab Worked out problems (Diffusion)

16 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A sample problem is worked out using Drift-Diffusion lab. The problem statement deals with the concept of diffusion in semiconductors.

Worked Examples for Carrier Statistics (advanced)

Two worked out examples based on Fermi-Dirac Vs Maxwell-Boltzmann statistics and temperature effects are presented.

ABACUS: Test for MOSCAP Tool

Worked Examples for Carrier Statistics (basic)

Several worked out examples are presented that illustrate the basic concept of carrier concentration in semiconductors.

Drift Diffusion - Temperature Sensor

The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.

ABACUS: Test for Drift Diffusion Lab

12 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Verification of the Validity of the Drift-Diffusion Lab Tool

11 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and...

Verification of the Validity of the MOSCap Tool

Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.

Carrier Statistics - Temperature Effects

10 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.The goal in this test...

ABACUS: Test for Carrier Statistics Tool

Carrier Statistics Tool Verification

This test verifies the Carrier Statistics Tool by comparing the numerically computed and analytically extracted, electron and hole carrier densities. The results are close within 2% of margin.

Nanotechnology Animation Gallery

22 Apr 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Animations and visualization are generated with various nanoHUB.org tools to enable insight into nanotechnology and nanoscience. Click on image for detailed description and larger image download. Additional animations are also available Featured nanoHUB tools: Band Structure Lab. Carrier...