A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
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17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degradesmainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) isconsidered...
Multi-gate Nanowire FET
18 May 2007 | Tools | Contributor(s): Mincheol Shin
3D simulator for silicon nanowire field effect transistors with multiple gates
KP Nanowire/UTB FET
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22 Mar 2009 | Tools | Contributor(s): Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
IWCN 2021: International Workshop on Computational Nanotechnology
13 Jul 2021 | Workshops | Contributor(s): Mincheol Shin (organizer), Sung-Min Hong (organizer), Yong-Hoon Kim (organizer), Jiwon Chang (organizer), Hoon Ryu
The International Workshop on Computational Nanotechnology (IWCN) is the 21st in the series of International Workshops, until 2015 titled "Computational Electronics" and changed to "Computational Nanotechnology" in 2017. The new name, IWCN, reflects the longstanding aim of the...
Calculation of phonon transmission in Si/PtSi heterostructures
22 Jan 2016 | Online Presentations | Contributor(s): Jung Hyun Oh, Mincheol Shin
In this work we examine the suppression of phonon transport in another example, Si and SiPt heterostructures (3D). This heterostrucure is believed to have the benefit that the electrical conductance can be kept high while the phonon propagation is suppressed due to the large acoustic impedance...
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