A 3D Quantum Simulation of Silicon Nanowire Field-Effect Transistors
17 Jan 2006 | Online Presentations | Contributor(s): Mincheol Shin
As the device size of the conventional planar metal oxide semiconductor field effect transistor
(MOSFET) shrinks into the deep sub micron regime, the device performance significantly degrades
mainly due to the short-channel effect. The silicon nanowire field-effect transistor (SNWFET) is
considered …