Dr. Hasan M. Nayfeh received his Ph.D. in 2003 from MIT (Cambridge, Massachusetts). His research topic was Si/SiGe FETs. He is currently a senior engineer at the IBM Semiconductor R & D Center (East Fishkill, New York). He worked on SOI device design that resulted in the successful deployment of 65 & 45nm nodes and is currently working on technology definition for the 22nm node. . He has over 30 technical publications and 4 patents and is a senior member of the IEEE.