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Simulation of the Spin Field Effect Transistors: Effects of Tunneling and Spin Relaxation on its Performance
05 Apr 2010 | Online Presentations | Contributor(s): Yunfei Gao
A numerical simulation of spin-dependent quantum transport for a spin field effect transistor(spinFET) is implemented in a widely used simulator nanoMOS. This method includes the effect of bothspin relaxation in the channel and the tunneling barrier between the source/drain and the channel....
Cylindrical CNT MOSFET Simulator
22 Jul 2008 | Tools | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
PETE : Purdue Emerging Technology Evaluator
26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy
Estimate circuit level performance and power of novel devices
19 May 2006 | Tools | Contributor(s): , Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs