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Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model v. 1.0.0
25 Aug 2014 | Compact Models | Contributor(s): Zizhen Jiang, H.-S. Philip Wong
The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM. In principle, this model has no limitations on the size of the RRAM cell. The complex process of ion and vacancy migration was simplified into the growth of...