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Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Timothy Boykin
Material layers with a thickness of a few nanometers are common-place in today’s semiconductor
devices. Before long, device fabrication methods will reach a point at which the other two device
dimensions are scaled down to few tens of nanometers. The total atom count in such deca-nano
devices is …
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Nanoelectronic Modeling Lecture 33: Alloy Disorder in Bulk
07 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Chris Bowen
This presentation discusses disorder in AlGaAs unstrained systems in bulk.
Bandstructure of an ideal simple unit cell
What happens when there is disorder?
Concept of a supercell
Band folding in a supercell
Band extraction from the concept of approximate …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures …
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Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
14 Jan 2008 | Publications | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of …
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Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
07 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowires
Relationship between dispersion relationship and transmission in perfectly ordered wires
Band folding in Si nanowires
Tranmisison in disordered wires – relationship to an approximate …
