MOSCap: First-Time User Guide
30 Mar 2009 | Teaching Materials | Contributor(s): SungGeun Kim, Benjamin P Haley, Gerhard Klimeck
This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature, doping concentration and applied frequency. We also provide some basic definitions in this document.
Dragica Vasileska (2008), "MOS Capacitors Description"
Dragica Vasileska (2008), "MOSFET …
30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
17 Jan 2008 | Tools | Contributor(s): SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
MuGFET: First-Time User Guide
28 Apr 2008 | Teaching Materials | Contributor(s): SungGeun Kim, Sriraman Damodaran, Benjamin P Haley, Gerhard Klimeck
MuGFET is a simulation tool for nano-scale multi-gate FET structures.
This document provides instructions on how to use MuGFET.
MuGFET users can use also the PROPHET or the PADRE tool. Either of these provide self-consistent solutions to the Poisson and drift-diffusion equation.
At the nanometer scale, quantum transport approaches that are based on a full 3D Poisson-Schroedinger solution, like the nanowire Lab or the atomistically resolved Bandstructure Lab, are needed for insight into …
02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
Full-band 3D quantum transport simulation in nanowire structure