14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Notes on Scattering and Mobility in 1D, 2D, and 3D
06 Nov 2009 | Teaching Materials | Contributor(s): Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff
Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) or
quantum confined (2D and 1D) semiconductor structures. Analytical estimates are made
that show the mobility in quantum confined structures is, in general, lower or no higher
than in non-confined ones.