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Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
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Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.
Learning Objectives:
Quantum Transport Simulator
Full-Band and Atomistic
III-V HEMTs
Performance Analysis
Good Agreement …
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Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowires
Relationship between dispersion relationship and transmission in perfectly ordered wires
Band folding in Si nanowires
Tranmisison in disordered wires – relationship to an approximate …
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OMEN_FET
09 Apr 2009 | Tools | Contributor(s): Neerav Kharche, Mathieu Luisier, George A. Howlett, Gerhard Klimeck, Mehdi Salmani Jelodar
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
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Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
14 Jan 2008 | Publications | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step …
