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Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
Nanoelectronic Modeling Lecture 41: Full-Band and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multi-scale simulation of advanced InAs-based high mobility transistors.Learning Objectives:Quantum Transport Simulator Full-Band and Atomistic III-V HEMTs Performance Analysis Good Agreement with Experiment Some Open Issues...
Nanoelectronic Modeling Lecture 35: Alloy Disorder in Nanowires
05 Aug 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Timothy Boykin, Neerav Kharche, Mathieu Luisier, Neophytos Neophytou
This presentation discusses the consequences of Alloy Disorder in unstrained strained AlGaAs nanowiresRelationship between dispersion relationship and transmission in perfectly ordered wiresBand folding in Si nanowiresTranmisison in disordered wires – relationship to an approximate...
08 Sep 2009 | Tools | Contributor(s): Neerav Kharche, Mathieu Luisier, George A. Howlett, Gerhard Klimeck, Mehdi Salmani Jelodar
Simulates High Electron Mobility Transistor (HEMT), single-gate MOSFET, and double-gate MOSFET in effective mass approximation
Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
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14 Jan 2008 | Papers | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part II - Applications
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14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of...