EPFL HEMT MODEL
14 Aug 2019 | Contributor(s): Farzan Jazaeri, jean-michel sallese, Majid Shalchian, Matthias Bucher, Nikolaos Makris | doi:10.21981/GPPJ-VP68
The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the central concept is based on charge linear approximation.
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