-
Lecture 8: Mechanics of Defect Generation and Gate Dielectric Breakdown
10 Mar 2010 | Online Presentations | Contributor(s): Muhammad Alam
-
Lecture 10: Interface Damage & Negative Bias Temperature Instability
02 Feb 2010 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Background information
NBTI interpreted by R-D model
The act of measurement and observed quantity
NBTI vs. Light-induced Degradation
Possibility of Degradation-free Transistors
Conclusions
-
Universality of NBTI-Induced Interface Trap Generation and Its Impact on ID Degradation in Strained/ Unstrained PMOS Transistors
23 Dec 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Muhammad Alam
Despite extensive use of strained technology, it is still unclear whether NBTI-induced NIT generation in strained transistors is substantially different from that of unstrained ones. Here, we present a comprehensive theory for NIT generation in strained/unstrained transistors and show its …
-
On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory
16 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory. …
-
Lecture 6: 3D Nets in a 3D World: Bulk Heterostructure Solar Cells
29 Jul 2009 | Online Presentations | Contributor(s): Muhammad Alam
Outline:
Introduction:
definitions
and
review
Reaction
diffusion
in
fractal
volumes
Carrier
transport
in
BH
solar
cells
All
phase
transitions
are
not
fractal
Conclusions