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NanoFET
13 Mar 2006 | Tools | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck
Simulates ballistic transport in 2D MOSFET devices
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Modeling of Nanoscale Devices
19 Oct 2006 | Publications | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introduction
to the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanical
and atomistic effects. We first review the basis for the …
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Towards Multi-Scale Modeling of Carbon Nanotube Transistors
20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we
describe an effort underway to develop a comprehensive capability for multiscale simulation of
carbon …
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Basic Electronic Properties of DNA
28 Jul 2005 | Online Presentations | Contributor(s): M. P. Anantram
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