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Resonant Tunneling Diode Simulation with NEGF
18 Aug 2008 | Tools | Contributor(s): Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng
Simulate 1D RTDs using NEGF.
Nanoelectronic Modeling Lecture 20: NEGF in a Quasi-1D Formulation
25 Jan 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Samarth Agarwal, Zhengping Jiang
This lecture will introduce a spatial discretization scheme of the Schrödinger equation which represents a 1D heterostructure like a resonant tunneling diode with spatially varying band edges and effective masses.
NEMO5 Tutorial 6A: Device Simulation - Transport (Double Gate)
18 Jul 2012 | Online Presentations | Contributor(s): Mehdi Salmani Jelodar, Seung Hyun Park, Zhengping Jiang, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
Tight Binding Parameters by DFT mapping
12 Sep 2012 | Presentation Materials | Contributor(s): Yaohua Tan, Michael Povolotskyi, Tillmann Christoph Kubis, Yu He, Zhengping Jiang, Timothy Boykin, Gerhard Klimeck
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters. The traditional way of obtaining the ETB parameters is by fitting to experiment data,or critical...
Empirical Tight-binding Parameterization of SmSe in the sp3d5f7s* model
26 Mar 2013 | Downloads | Contributor(s): Zhengping Jiang, Marcelo Kuroda, Yaohua Tan, Dennis M. Newns, Michael Povolotskyi, Timothy Boykin, Tillmann Christoph Kubis, Gerhard Klimeck, Glenn J. Martyna
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and the ETB parameters.The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power...
Specific Resistance for Copper Interconnects
15 Nov 2017 | Tools | Contributor(s): Daniel A. Valencia-Hoyos, Gustavo A Valencia, Daniel F Mejia, Kuang-Chung Wang, Zhengping Jiang, Gerhard Klimeck, Michael Povolotskyi
This tool calculates the specific resistance $rho(alpha,beta,gamma)$ based on the atomistic model reported in preprint arXiv:1701.04897