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Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition
24 Oct 2012 | Teaching Materials | Contributor(s): Mark Lundstrom, Xingshu Sun
These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals
of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is
Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to
treat MOS electrostatics …
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Semiconductor Device Theory Exercises
30 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck, Mark Lundstrom
This collection of problems should help the students to better understand Semiconductor Device Physics on a fundamental and more complex level.
Crystal lattices and Miller indicies
From 1 well to 2 wells to 5 wells to periodic potentials
Periodic potentials and bandstructure
Bandstructure …
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ECE 656 Exam 2 (Fall 2009)
07 Dec 2009 | Teaching Materials | Contributor(s): Mark Lundstrom
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ECE 656 Exam 1 (Fall 2009)
08 Oct 2009 | Teaching Materials | Contributor(s): Mark Lundstrom
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Homework Exercise on Drift & Diffusion in Bulk Semiconductors - considerations of lifetime
30 Mar 2008 | Teaching Materials | Contributor(s): Mark Lundstrom, Saumitra Raj Mehrotra
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light. Analytical derivations are requested and considerations of lifetime are considered.NCN@Purdue
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Homework for PN Junctions: Depletion Approximation (ECE 305)
06 Jan 2006 | Teaching Materials | Contributor(s): Mark Lundstrom, David Janes
This homework assignment is part of ECE 305 "Semiconductor Device Fundamentals" (Purdue University). It contains 7 problems which lead students through a comparison of the depletion approximation and the exact analysis of a PN junction diode.
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Exercises for FETToy
11 Oct 2005 | Teaching Materials | Contributor(s): Mark Lundstrom
This series of exercises uses the FETToy program to illustrate some of the key physical concepts for nanotransistors.
