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Engineering Disorder in Opto-Electronics
05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
GaN is a wide bandgap material which can on one hand withstand high power and high temperature operating conditions, and on the other hand has high saturation velocity needed for high frequency operation. This tremendous potential has not been fully realized yet and in this talk it will be shown that it is most probably due to hot longitudinal optical phonons effect. Then it will be demonstrated that introducing a certain degree of alloy or isotope disorder can mitigate hot phonon effects and improve performance of GaN transistors.
Is Graphene Alone in the Universe?
In this talk we show that many heterostructures based on III-V (InGaSb) and II-VI (HgCdTe) semiconductors can be engineered to have all the above properties nearly indistinguishable from those of graphene, while adding certain degree of versatility, such as ability to have not only 2-dimensional, but also 3-dimensional and 1-dimensional structures with graphene-like properties. This may be important for many applications, and in this talk we shall concentrate on the ones in plasmonics and metamaterials.
Slow and Fast Light - Penetrating the Fog
16 Dec 2010 | Online Presentations | Contributor(s): Jacob B. Khurgin
Linear and Nonlinear Optical Devices Based on Slow Light Propagation: Figures of Merit
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19 May 2008 | Online Presentations | Contributor(s): Jacob B. Khurgin
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