04 Oct 2013 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan
Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.
Using nanoHUB to Introduce Middle School Students to Models and Simulations
24 Mar 2014 | Teaching Materials | Contributor(s): Tanya Faltens
This is a combination hands-on and simulation activity that will teach middle school students about the function and importance of modeling and simulations in science and engineering while learning about three important carbon nanostructures: graphene, bucky balls, and carbon nanotubes. The …
CRYSTAL VIEWER SIMULATION TOOL on nanoHUB.org
25 Mar 2014 | Presentation Materials | Contributor(s): osiris vincent ntarugera, Zach Schaffter, Kevin Margatan, Tanya Faltens, James Fonseca, Michael Povolotskyi, Gerhard Klimeck
Evaluating the Fermi Function at Ec
05 May 2012 | Online Presentations | Contributor(s): Tanya Faltens
Short narrated instruction giving step-by-step instructions for evaluating f(E) at Ec. The general method is explained,and a value is calculated for the specific case of Si at 300K.
Evaluating the Fermi Function at Ec + 0.02 eV
12 Oct 2013 | Teaching Materials | Contributor(s): Tanya Faltens
This is a short animation explaining how to evaluate the fermi function, given a band diagram and an energy level of interest.