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A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells
16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam
In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level.
Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN
Karthik Y and Souvik …
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Essential Aspects of Negative Bias Temperature Instability (NBTI)
01 May 2011 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam
We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping …
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Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices
30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam
Mobility degradation due to generation of interface
traps, Δµeff(NIT), is a well-known phenomenon that has been
theoretically interpreted by several mobility models. Based on
these analysis, there is a general perception that Δµeff(NIT) is
relatively insignificant (compared to Δµeff due to …
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling
25 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON gate …
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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)
06 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra
This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner …
