A Physical Model for Non-Ohmic Shunt Conduction and Metastability in Amorphous Silicon Solar Cells

16 Aug 2011 | Online Presentations | Contributor(s): Sourabh Dongaonkar, Souvik Mahapatra, Karthik Yogendra, Muhammad Alam

In this talk we develop a coherent physics based understanding of the shunt leakage problem in a-Si:H cells, and discuss its implications on cell and module level. Sourabh Dongaonkar is with School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN Karthik Y and Souvik …

Essential Aspects of Negative Bias Temperature Instability (NBTI)

01 May 2011 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad Alam

We develop a comprehensive theoretical framework for explaining the key and characteristic experimental signatures of NBTI. The framework is based on an uncorrelated dynamics of interface-defect creation/annihilation described by Reaction-Diffusion (R-D) theory and hole trapping/detrapping …

Mobility Variation Due to Interface Trap Generation in Plasma Oxynitrided PMOS Devices

30 Jun 2008 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Mobility degradation due to generation of interface traps, Δµeff(NIT), is a well-known phenomenon that has been theoretically interpreted by several mobility models. Based on these analysis, there is a general perception that Δµeff(NIT) is relatively insignificant (compared to Δµeff due to …

Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

25 Mar 2012 | Courses | Contributor(s): Souvik Mahapatra

This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON gate …

Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling (2011)

06 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner …

Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Fast and Ultra-fast Characterization Methods (Part 1 of 3)

26 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

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Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Predictive Modeling (Part 3 of 3)

25 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

This is a presentation on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON gate …

Negative Bias Temperature Instability (NBTI) in p-MOSFETs: The Impact of Gate Insulator Processes (Part 2 of 3)

25 Mar 2012 | Online Presentations | Contributor(s): Souvik Mahapatra

This presentation is part 2 on Negative Bias Temperature Instability (NBTI), observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years it has become a very important reliability concern as the industry moved from thicker SiO2 to thinner SiON …

On the Resolution of Ultra-fast NBTI Measurements and Reaction-Diffusion Theory

16 Dec 2009 | Online Presentations | Contributor(s): Ahmad Ehteshamul Islam, Souvik Mahapatra, Muhammad A. Alam

Reaction-Diffusion (R-D) theory, well-known to successfully explain most features of NBTI stress, is perceived to fail in explaining NBTI recovery. Several efforts have been made to understand differences between NBTI relaxation measured using ultra-fast methods and that predicted by R-D theory. …