
SelfAssembled Quantum Dot Wave Structure
31 Jan 2011  Animations  Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.

Electron Density in a Nanowire
30 Jan 2011  Animations  Contributor(s): Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.

Tunneling in an NanometerScaled Transistor
25 Jan 2011  Animations  Contributor(s): Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultrascaled transistor.

MOSFET Lab  Scaling
03 Jan 2011  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem

Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010  Online Presentations  Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic structure calculation examples will illustrate the importance of atomistic disorder in realistically large systems. For strained Si quantum wells on wafermiscut SiGe substrates valley splitting is computed as a function of magnetic field. For InAs quantum dots embedded in an InGaAs strain reducing layer on top of a GaAs substrate NEMO 3D can model the nonlinear optical transition energy dependence as a function of Inconcentration.

MOSFET Worked out problems 1
06 Dec 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

ABACUS: Test for MOSFET Tool
18 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

Verification of the Validity of the MOSFET Tool
11 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on BulkCharge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

Thermoelectric effects in semiconductor nanostructures: Role of electron and lattice properties
06 Oct 2010  Online Presentations  Contributor(s): Abhijeet Paul, Gerhard Klimeck
This presentation covers some aspects of present development in the field of thermoelectricity and focuses particularly on the silicon nanowires as potential thermoelectric materials. The electronic and phonon dispersions are calculated and used for the calculation of thermoelectric properties in these nanowires.

ABACUS: Test for BJT lab Tool
06 Oct 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning student or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenging problem.

Verification of the Validity of the BJT Tool
24 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A pnp BJT in CommonBase configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

MOSCAP Worked out problems (Basic)
19 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A simple MOSCAP is analyzed under different operation modes namely: Accumulation, near threshold and Inversion.

Drift Diffusion Lab Worked out problems (Drift)
18 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This sample worked out problem illustrated the concept of mobility. Mobility values are computed for different material and doping levels.

Drift Diffusion  Temperature Sensor
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.

Worked Examples for Carrier Statistics (basic)
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Several worked out examples are presented that illustrate the basic concept of carrier concentration in semiconductors.

ABACUS: Test for MOSCAP Tool
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

Worked Examples for Carrier Statistics (advanced)
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Two worked out examples based on FermiDirac Vs MaxwellBoltzmann statistics and temperature effects are presented.

Drift Diffusion Lab Worked out problems (Diffusion)
16 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
A sample problem is worked out using DriftDiffusion lab. The problem statement deals with the concept of diffusion in semiconductors.

ABACUS: Test for Drift Diffusion Lab
12 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.

Verification of the Validity of the DriftDiffusion Lab Tool
11 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
DriftDiffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and numerically.

Verification of the Validity of the MOSCap Tool
11 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.

Carrier Statistics Tool Verification
10 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
This test verifies the Carrier Statistics Tool by comparing the numerically computed and analytically extracted, electron and hole carrier densities. The results are close within 2% of margin.

Verification of the Validity of Bulk Bandstructure Lab
10 Aug 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This set of slides compares the optical gaps for Si, Ge and GaAs with those given in www.ioffe.ru, thus verifying the validity of the bulk Bandstructure Lab tool.

ABACUS: Test for Bandstructure Lab
10 Aug 2010  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This is a test that examines ones understanding of electronic structure once he/she has gone through the materials and exercises provided on the nanoHUB as part of the ABACUS Bandstructure topic page and running the Bandstructure Lab.

ABACUS: Test for Carrier Statistics Tool
10 Aug 2010  Teaching Materials  Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a selflearning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the challenge problem.