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Homework Exercise on Drift & Diffusion in Bulk Semiconductors
0.0 out of 5 stars
30 Mar 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck
The tutorial questions based on Drift Diffusion Lab v1.0 available online at Drift Diffusion Lab. Students are asked to explore the concepts of Drift, Diffusion, Quasi Fermi Levels, and response to light.NCN@Purdue
Homework Exercise on Bipolar Junction Transistors
30 Mar 2008 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Muhammad A. Alam, Gerhard Klimeck
The tutorial questions are based on the Bipolar Junction Transistor Lab v1.0 available online at Bipolar Junction Transistor Lab. Students are asked to find the emitter efficiency, the base transport factor, current gains, and the Early voltage. Also a qualitative discussion is requested.NCN@Purdue
Nanoelectronic Modeling: Multimillion Atom Simulations, Transport, and HPC Scaling to 23,000 Processors
5.0 out of 5 stars
07 Mar 2008 | Online Presentations | Contributor(s): Gerhard Klimeck
Future field effect transistors will be on the same length scales as “esoteric” devices such as quantum dots, nanowires, ultra-scaled quantum wells, and resonant tunneling diodes. In those structures the behavior of carriers and their interaction with their environment need to be fundamentally...
4.5 out of 5 stars
06 Feb 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Dragica Vasileska, Gloria Wahyu Budiman
This tool simulates a Bipolar Junction Transistor (BJT) using a 2D mesh. Powered by PADRE.
Semiconductor Device Education Material
28 Jan 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck
This page has moved to "a Wiki page format"When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in our daily lives. Electronic systems are built from...
Homework Exercise on Fermi-Dirac and Maxwell-Boltzmann Distributions
24 Jan 2008 | Teaching Materials | Contributor(s): Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck
The tutorial questions based on Carrier Statistics Lab v1.0 available online at Carrier Statistics Lab. Students are asked to explore the differences between Fermi-Dirac and Maxwell-Boltzmann distributions, compute electron and hole concentrations, study temperature dependences, and study...
3.5 out of 5 stars
22 Jan 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck, Gloria Wahyu Budiman
Simulate single semiconductor characteristics
Periodic Potential Lab
19 Jan 2008 | Tools | Contributor(s): Abhijeet Paul, Junzhe Geng, Gerhard Klimeck
Solve the time independent schrodinger eqn. for arbitrary periodic potentials
17 Jan 2008 | Tools | Contributor(s): SungGeun Kim, Gerhard Klimeck, Sriraman Damodaran, Benjamin P Haley
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
Electron-Phonon and Electron-Electron Interactions in Quantum Transport
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...
High Precision Quantum Control of Single Donor Spins in Silicon
14 Jan 2008 | Papers | Contributor(s): Rajib Rahman, marta prada, Gerhard Klimeck, Lloyd Hollenberg
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using tight-binding and band minima basis approaches and compared to the recent precision measurements. In contrast with previous effective...
Valley splitting in strained silicon quantum wells modeled with 2 degree miscuts, step disorder, and alloy disorder
14 Jan 2008 | Papers | Contributor(s): Neerav Kharche, marta prada, Timothy Boykin, Gerhard Klimeck
Valley splitting (VS) in strained SiGe/Si/SiGe quantum wells grown on (001) and 2° miscut substrates is computed in a magnetic field. Calculations of flat structures significantly overestimate, while calculations of perfectly ordered structures underestimate experimentally observed VS. Step...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part II - Applications
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I - Models and Benchmarks
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of...
Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Timothy Boykin
The broadening of the conduction and valence band edges due to compositional disorder in alloyed materials of finite extent is studied using an s p3 s ∗ tight binding model. Two sources of broadening due to configuration and concentration disorder are identified. The concentrational disorder...
Development of a Nanoelectronic 3-D (NEMO 3-D ) Simulator for Multimillion Atom Simulations and Its Application to Alloyed Quantum Dots
Material layers with a thickness of a few nanometers are common-place in today’s semiconductordevices. Before long, device fabrication methods will reach a point at which the other two devicedimensions are scaled down to few tens of nanometers. The total atom count in such deca-nanodevices is...
Carrier Statistics Lab
08 Jan 2008 | Tools | Contributor(s): Saumitra Raj Mehrotra, Abhijeet Paul, Gerhard Klimeck
Calculate the electron & hole density in semiconductors
Crystal Viewer Tool
4.0 out of 5 stars
22 Dec 2007 | Tools | Contributor(s): Yuanchen Chu, Fan Chen, Daniel F Mejia, James Fonseca, Michael Povolotskyi, Gerhard Klimeck
Visualize different crystal lattices and planes
NanoElectronic MOdeling: NEMO
20 Dec 2007 | Online Presentations | Contributor(s): Gerhard Klimeck
This presentation was one of 13 presentations in the one-day forum, "Excellence in Computer Simulation," which brought together a broad set of experts to reflect on the future of computational science and engineering.Novel nanoelectronic devices such as quantum dots, nanowires, and ultra-scaled...
Engineering at the nanometer scale: Is it a new material or a new device?
06 Nov 2007 | Online Presentations | Contributor(s): Gerhard Klimeck
This seminar will overview NEMO 3D simulation capabilities and its deployment on the nanoHUB as well as an overview of the nanoHUB impact on the community.
25 Jun 2007 | Tools | Contributor(s): Xufeng Wang, Sriraman Damodaran, Gerhard Klimeck, Clemens Heitzinger, POLIZZI ERIC
Nanowire classical using Prophet
Illinois 2007 Nano-Bio Workshop with nanoHUB Summer School and User Forum
27 Apr 2007 | Workshops | Contributor(s): Narayan Aluru, Eric Jakobsson, Umberto Ravaioli, Dave Mattson, Gerhard Klimeck, Michael McLennan
This summer, on the campus of the University of Illinois, the NCDBN and NCN@UIUC will hold a scientific meeting on "Experimental and Computational Approaches to Understanding Membrane Assemblies and Permeation," a nanoHUB user forum, and a summer school on "Multiscale Theory, Simulation, and...
Atomistic Alloy Disorder in Nanostructures
26 Feb 2007 | Online Presentations | Contributor(s): Gerhard Klimeck
Electronic structure and quantum transport simulations are typically performed in perfectly ordered semiconductor structures. Bands and modes are defined resulting in quantized conduction and discrete states. But what if the material is fundamentally disordered? What if the disorder is at the...
14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
31 Oct 2006 | Tools | Contributor(s): , , Paul Dodd, M. A. Stettler, Xufeng Wang, Gerhard Klimeck
Improved program consists of DEMON and SDEMON