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Worked Examples for Carrier Statistics (basic)

16 Aug 2010 | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Several worked out examples are presented that illustrate the basic concept of carrier concentration in semiconductors.

Worked Examples for a PN Diode

01 Jun 2010 | Contributor(s): Dragica Vasileska, Gerhard Klimeck

several worked examples are presented that illustrate the operation of a PN diode.

What are the proper transport models at the nanoscale?

30 Jun 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This presentation is part of the series Nanoelectronics and Modeling at the Nanoscale

Verification of the Validity of the PN Junction Tool

08 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

These simulations and comparisons with the depletion charge approximation prove the validity of the PN Junction tool.

Verification of the Validity of the MOSFET Tool

11 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the analytical model. MATLAB script used for verification is also available for download.

Verification of the Validity of the MOSCap Tool

11 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.

Verification of the Validity of the Drift-Diffusion Lab Tool

Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and...

Verification of the Validity of the BJT Tool

24 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

A pnp BJT in Common-Base configuration is analyzed both analytically and numerically using BJT Lab. DC current gain and Output characteristics are computed.MATLAB script used is also available for download.

Verification of the Validity of Bulk Bandstructure Lab

10 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This set of slides compares the optical gaps for Si, Ge and GaAs with those given in www.ioffe.ru, thus verifying the validity of the bulk Bandstructure Lab tool.

Uniform versus delta doping in 1D heterostructures: an Exercise

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15 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise is designed to demonstrate that delta doping leads to larger sheet electron density in the channel and it also allows for better control of the charge density in the channel region of High Electron Mobility Transistors (HEMTs).

Tutorial for PADRE Based Simulation Tools

10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This tutorial is intended for first time and medium level users of PADRE-based simulation modules installed on the nanohub. It gives clear overview on the capabilities of each tool with emphasis to most important effects occuring in nano-scale devices.

Tunneling

29 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This set of slides describes the quantum-mechanical process for tunneling and how it is accounted for in modeling semiconductor devices. We explain WKB approximation, transfer matrix approach and the Tsu-Esaki formula for the calculation of the current.

Time-Dependent Perturbation Theory: an Exercise

10 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

www.eas.asu.edu/~vasileskNSF

Tight-Binding Band Structure Calculation Method

02 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This set of slides describes on simple example of a 1D lattice, the basic idea behind the Tight-Binding Method for band structure calculation.

Test for SCHRED

20 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This is a test that checks the knowledge of the students before and after performing the exercises in the Schred Learning Module. It examines whether students understand concepts of quantum confinement, MOS capacitance and average distance of the carriers.

Test for Monte Carlo Learning Module

this is a test for the MC Learning Module.

Test for Bound States Calculation Lab

07 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This is a test for BSC Lab.

Test for Abacus

13 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This test checks preparedness of students in semiconductor device theory.

Technology Trends as seen in Year 2011

24 Jun 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

In this presentations we discuss Nanotechnology Trends as seen in Year 2011.

Stationary Perturbation Theory: an Exercise for PCPBT

28 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise allows us to test the first and second order stationary perturbation theory and explain mathematically the shift in the energies due to a small perturbation in a quantum well.www.eas.asu.edu/~vasileskNSF

Solve a Challenge for the BSC Lab

This is a challenge problem for the BSC Lab.

Solve a Challenge for a PN Diode

06 Jun 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This is SOLVE A CHALLENGE PROBLEM for pn-diodes.

Solar Cells Operation and Modeling

15 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This set of slides decribes the basic principles of operation of various generations on solar cells with emphasis to single crystalline solar cells. Next, semiconductor equations that describe the operation of a solar cell under simplified conditions is given. Finally, modeling of single junction...

Smith Chart Examples

02 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

Smith charts are used in RF applications to represent S-parameters and reflection coefficients of a two-port network. Examples are also given on calculation of the S-parameters for MEMT Structures using Silvaco ATLAS BLAZE module. Matching network construction is also illustrated.

Slides: Zeeman Splitting