DATE CHANGE: nanoHUB could be intermittently unavailable on 05/06 from 8:00 am – 1:00 pm (EST) for scheduled maintenance. All tool sessions will expire on 05/06 at 8:00 am (EST).
Find information on common issues.
Ask questions and find answers from other users.
Suggest a new site feature or improvement.
Check on status of your tickets.
Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016 | Compact Models |Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Top 1 shown
Stanford 2D Semiconductor (S2DS) Transistor Model 1.0.0
18 Aug 2014 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2. Version 1.0.0 represents the initial release. The model relies on the drift-diffusion approach, including quantum capacitance, simple band structure, velocity saturation, contact resistance and self-heating effects that are specific to 2D materials. The model has been developed for double-gate devices and employs approximations to simplify integrals and enable compact modeling of 2D-FETs. Caution should be taken while using the model for circuit simulation. This is the first attempt to develop a model for 2D semiconductors based on physics and experimental data with a minimum of fitting parameters. Future updates to the model are planned to make it more robust and accurate. As of now the model is stable for DC and limited AC simulations. For reference, please examine the sample circuit bench provided.
The equations and models used are outlined in the manual provided. The manual also contains details about the parameters and extraction method. Almost all parameters are physics-based and have been derived from experimental studies available at the time of this release. Some parameters will be updated in future versions of the model, as new data and other improvements become available.
Energy Dissipation at the Nanoscale: from graphene to phase-change materials
20 Dec 2011 | Online Presentations | Contributor(s): Eric Pop
0.0 out of 5 stars
20 May 2011 | Tools | Contributor(s): Eric Pop, Feifei Lian
Illinois ECE 440 Solid State Electronic Devices, Lecture 22&23: P-N Junction Capacitance; Contacts
07 Mar 2010 | Online Presentations | Contributor(s): Eric Pop
Illinois ECE 440 Solid State Electronic Devices, Lecture 24: Narrow-base P-N Diode
Top 5 shown | See more results