Carbon Nanotube Electronics: Modeling, Physics, and Applications
30 Oct 2006 | Papers | Contributor(s): Jing Guo
In recent years, significant progress in understanding the physics of carbon nanotube
electronic devices and in identifying potential applications has occurred. In a nanotube,
low bias transport can be nearly ballistic across distances of several hundred nanometers.
Deposition of high-κ gate insulators does not degrade the carrier mobility. The
conduction and valence bands are symmetric, which is advantageous for complementary
14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
MOSCNT: code for carbon nanotube transistor simulation
14 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that this code does NOT treat Schottky-barrier CNTFETs.
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
20 Sep 2006 | Papers | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological
questions in the rapidly developing field of carbon nanotube electronics. In this paper, we
describe an effort underway to develop a comprehensive capability for multiscale simulation of
carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the
simulation of ballistic CNTFETs by self-consistently solving the Poisson and Schrödinger
equations using the non-equilibrium Green’s function (NEGF) formalism. The NEGF transport
equation is solved at two levels: i) a semi-empirical atomistic level using the pz orbitals of carbon
atoms as the basis, and ii) an atomistic mode space approach, which only treats a few subbands
in the tube’s circumferential direction while retaining an atomistic grid along the carrier transport
direction. Simulation examples show that these approaches describe quantum transport effects in
nanotube transistors. The paper concludes with a brief discussion of how these semi-empirical
device level simulations can be connected to ab initio, continuum, and circuit level simulations
in the multi-scale hierarchy.