FETToy

14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

A Tutorial for Nanoelectronics Simulation Tools

03 Jul 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in …

Introduction to FETToy

03 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …

Quantum Dot Lab Learning Module: An Introduction

02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

THIS MATERIAL CORRESPONDS TO AN OLDER VERSION OF QUANTUM DOT LAB THAN CURRENTLY AVAILABLE ON nanoHUB.org.

Introduction to nanoMOS

02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …

Introduction to Schred

28 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the Schred simulator. A brief introduction to Schred is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …

Introduction to CNTbands

28 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo

This learning module introduces nanoHUB users to the CNTbands simulator. A brief introduction to CNTbands is presented, followed by voiced presentations featuring the simulator in action. Upon completion of this module, users should be able to use this simulator to gain valuable insight into the …

Bandstructure of Carbon Nanotubes and Nanoribbons

14 Jun 2007 | Learning Modules | Contributor(s): James K Fodor, Seokmin Hong, Jing Guo

This learning module introduces users to the Carbon-Nano Bands simulation tool, which simulates the bandstructure of Carbon Nanotubes (CNTs) and Nanoribbons (CNRs). To gives users a strong background in bandstructure, the module starts with sections that introduce bandstructure basics. To this …

CNTbands

14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed

This tool simulates E-k and DOS of CNTs and graphene nanoribbons.

MOSCNT: code for carbon nanotube transistor simulation

14 Nov 2006 | Downloads | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov

Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that …

Carbon Nanotube Electronics: Modeling, Physics, and Applications

30 Oct 2006 | Publications | Contributor(s): Jing Guo

In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-κ …

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …

Optimization of Transistor Design for Carbon Nanotubes

20 Jan 2006 | Online Presentations | Contributor(s): Jing Guo

We have developed a self-consistent atomistic simulator for CNTFETs. Using the simulator, we show that a recently reported high-performance CNTFET delivers a near ballistic on-current. The off-state, however, is significantly degraded because the CNTFET operates like a non-conventional Schottky …

CNT_bands

09 Sep 2005 | Tools | Contributor(s): Jing Guo, Akira Matsudaira

Computes E(k) and the density-of-states (DOS) vs. energy for a carbon nanotube

Theory of Ballistic Nanotransistors

27 Nov 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …