Spin Quantum Gate Lab
26 Apr 2019 | Contributor(s): Tong Wu, Qimao Yang, Daniel Volya, Jing Guo
Simulate the device-level characteristics of spin-based quantum gates.
Power Diode Lab
21 Nov 2022 | Contributor(s): Jing Guo, Ning Yang
Calculate the critical breakdown electric field, break down voltage, depletion region thickness, and specific on resistance of power diodes.
Nanosheet FET
24 May 2023 | Contributor(s): Jing Guo, Ning Yang, Qimao Yang
Simulate Nanosheet FET and FinFET based on Quantum Transport
FETToy
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
CNT_bands
09 Sep 2005 | Tools | Contributor(s): Jing Guo, Akira Matsudaira
Computes E(k) and the density-of-states (DOS) vs. energy for a carbon nanotube
CNTbands
14 Dec 2006 | Tools | Contributor(s): Gyungseon Seol, Youngki Yoon, James K Fodor, Jing Guo, Akira Matsudaira, Diego Kienle, Gengchiau Liang, Gerhard Klimeck, Mark Lundstrom, Ahmed Ibrahim Saeed
This tool simulates E-k and DOS of CNTs and graphene nanoribbons.
2DFET
18 Feb 2021 | Tools | Contributor(s): Ning Yang, Tong Wu, Jing Guo
Calculate the I-V characteristics of field-effect transistors (FETs) based on monolayer two-dimensional (2D) materials.
2D Material Carrier Concentration Lab
10 Nov 2022 | Tools | Contributor(s): Jing Guo, Ning Yang
Simulate density of states, carrier statistics, and carrier concentrations in two-dimensional semiconductors and graphene