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Modeling Quantum Transport in Nanoscale Transistors
30 Oct 2006 | Publications | Contributor(s): ramesh venugopal
As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quan-
tum mechanical effects begin to manifest themselves and affect important device
performance metrics. Therefore, simulation tools which can be applied to design
nanoscale transistors in the future, require new …
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A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
19 Oct 2006 | Publications | Contributor(s): ramesh venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study
the effect of channel access geometries on device performance. This simulation scheme solves the
non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …
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nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, ramesh venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is
described. The program uses a Green’s function approach and a simple treatment of
scattering based on the idea of so-called Büttiker probes. The double gate device geometry
permits an efficient mode space …
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Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
28 Sep 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, ramesh venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim-
ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon-
on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the …
