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Quantum Spins in the Solid-State: An Atomistic Material-to-Device Modeling Approach
30 Aug 2017 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will present an atomistic modeling approach that combines intrinsic material and extrinsic device properties under a unified framework to describe spins and their interactions with the
environment. This approach captures important spin properties such as exchange, spin-orbit, hyperfine, and magnetic dipolar interactions from a description of atomic orbitals and chemical bonds, and provides fundamental insights into engineering these interactions at the atomic level.
Valley Dependent g-factors in Silicon: Role of Spin-Orbit and Micromagnets
13 Dec 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk I will show that spin splittings in silicon quantum dots are inherently valley-dependent. Interface disorder, such as monoatomic steps, can strongly affect the intrinsic spin-orbit coupling and can cause device-to-device variations in g-factors. I will also describe the anisotropy of the g-factor as a function of the angle of an external magnetic field and compare with recent experimental measurements. I will also show how the anisotropy is affected by integrated micromagnets in silicon qubits that can generate an extrinsic coupling between spin and charge. Finally, I will show how the intrinsic and extrinsic factors affecting the spins can be used to perform electrical rotations of spin qubits.
Tunnel FET Compact Model
11 Mar 2015 | Tools | Contributor(s): Hesameddin Ilatikhameneh, Tarek Ahmed Ameen (editor), Fan Chen (editor), Ramon Salazar, Gerhard Klimeck, Joerg Appenzeller, Rajib Rahman
Universal Behavior of Strain in Self-assembled Quantum Dots
05 May 2016 | Downloads | Contributor(s): Hesameddin Ilatikhameneh, Tarek Ahmed Ameen, Gerhard Klimeck, Rajib Rahman
This resource contains the universal behavior strain files produced by Nemo5. Attached also a Matlab script that can utilize the these compact descriptive files to produce the full strain distribution. Supported QD shapes; Cuboid, Dome, Cone, and Pyramid. Supported material systems; InAs/GaAs, InAs/InP, InP/GaAs, and InP/GaP corresponding email: email@example.com
Atomistic Modeling of Nano Devices: From Qubits to Transistors
13 Apr 2016 | Online Presentations | Contributor(s): Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange in donor qubits help to propose an improved two-qubit gate in silicon. I will also show how spin-orbit-valley coupling due to interface roughness affects the spin resonance frequencies and spin lifetimes in silicon quantum dots. Finally, I will show how atomistic transport simulations help to identify the best 2D materials and designs for tunnel transistors.
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