25 Jun 2007 | Tools | Contributor(s): Xufeng Wang, Sriraman Damodaran, Gerhard Klimeck, Clemens Heitzinger, POLIZZI ERIC
Nanowire classical using Prophet
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
4.0 out of 5 stars
31 Oct 2006 | Papers | Contributor(s): POLIZZI ERIC, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
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30 Oct 2006 | Papers | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
3.0 out of 5 stars
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, POLIZZI ERIC, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
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