25 Jun 2007 | Tools | Contributor(s): Xufeng Wang, Sriraman Damodaran, Gerhard Klimeck, Clemens Heitzinger, Eric Polizzi
Nanowire classical using Prophet
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism
31 Oct 2006 | Papers | Contributor(s): Eric Polizzi, Supriyo Datta
This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using the finite element method (FEM). In this approach, the derivation of the boundary conditions at the interfaces of the device with the reservoirs, is used to calculate the self-energy functions. The FEM allows us to consider very complex geometries and non-uniform mesh, while the NEGF is a powerful formalism which will allow to include scattering in the problem. The simulations are performed by solving self-consistently the NEGF (equivalent to the open schrodinger equation in ballistic regime) for the transport problem and the Poisson equation to account for the space charge effects.
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
30 Oct 2006 | Papers | Contributor(s): Jing Wang, Eric Polizzi, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future
integrated circuits, and simulations will be important for understanding its device physics and
assessing its ultimate performance limits. In this work, we present a three-dimensional quantum
mechanical simulation approach to treat various SNWTs within the effective-mass approximation.
We begin by assuming ballistic transport, which gives the upper performance limit of the devices.
The use of a mode space approach (either coupled or uncoupled) produces high computational
efficiency that makes our 3D quantum simulator practical for extensive device simulation and
design. Scattering in SNWTs is then treated by a simple model that uses so-called Büttiker probes,
which was previously used in metal-oxide-semiconductor field effect transistor (MOSFET)
simulations. Using this simple approach, the effects of scattering on both internal device
characteristics and terminal currents can be examined, which enables our simulator to be used for
the exploration of realistic performance limits of SNWTs.