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Profile

  • Organization
    Indian Institute of Science (IISc), Bangalore, India

  • Employment Type
    University / College Staff

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  • Biography

    Amretashis Sengupta was born in Siliguri, WB, India in 1984. He received the B.Sc.(Hons.) in Physics from the University of North Bengal in 2005, with 1st Class 2nd Rank. In 2007, he received the M.Sc.(Physics) with specialization in Electronics, ranking 1st Class 1st from the University of North Bengal. He received the M.Tech. (Nano Science & Technology) degree from Jadavpur University in 2010, with 1st Class 1st Rank. He was awarded the DST-INSPIRE Fellowship by DST, Govt. of India in 2010. He received his Ph.D.(Engg.) degree in 2012 from the Department of Electronics & Telecommunication Engineering, Jadavpur University. He was awarded the DST Post-doctoral Fellowship in Nano Science & Technology by DST, Govt. of India in 2012. His research interests are first principles based simulations on 2D materials, Graphene/ CNT FET, and analytical/ semi-analytical modeling of quantum confinement effects in nanocrystal embedded gate dielectric planar and multi-gate MOS Non-Volatile Memories (NVM). He is a Life Member of the Indian Physical Society, Member IEEE, and the IEEE Electron Devices Society, Member of Semiconductor Society (India), and a Life Member of the American Nano Society.


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