Structure and Morphology of Silicon-Germanium Thin Films
07 Feb 2015 | Presentation Materials | Contributor(s): Brian Demczyk
This presentation describes the growth of (Si,Ge & SiGe) thin films on Si and Ge (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition (UHVCVD). Thin films were characterized structurally by conventional and high-resolution transmission electron microscopy (TEM) and optically by photoluminescence (PL) spectroscopy. The evolution of surface morphology was monitored via atomic force microscopy (AFM).The emphasis was on the determination of criteria for the two to three...
Interface Structure/Surface Morphology of (Co,Fe,Ni)/Cu/Si Thin Films
25 Mar 2014 | Presentation Materials | Contributor(s): Brian Demczyk, R. Naik, A. Lukaszew, G. W. Auner, V. M. Naik
The effects of thin film and interfacial stress on the magnetic properties Fe, Co and Ni films deposited by molecular beam epitaxy on Cu underlayers (Si substrate) were examined, employing transmission,ans scanning probe microscopy and reflection high energy diffraction. It ws found that the surface roughness determined scanning probe microscopy correlates with the interface "waviness", deduced by high-resolution electron microscopy, and serves to pull M out of plane.
Evolution of Microstructure and Magnetic Properties in CoCr Thin Films
25 Mar 2014 | Presentation Materials | Contributor(s): Brian Demczyk, J. O. Artman
This presentation describes the structural and magnetic properties, including domain structures, in magnetron-sputtered Co-25% Cr thin films.
Structure and Properties of Carbon and Boron Nitride Nanotubes
10 Jan 2014 | Presentation Materials | Contributor(s): Brian Demczyk
This presentation describes structure and mechanical property determinations on carbon and boron nitride (sp2-bonded) nanotubes , as deduced by transmission electron microscopy.
Structure and Morphology of Silicon Germanium Thin Films
30 Dec 2013 | Papers | Contributor(s): Brian Demczyk
Single layer silicon and germanium films as well as nominally 50-50 silicon-germanium alloys were deposited on single crystal silicon and germanium (001) and (111) substrates by ultrahigh vacuum chemical vapor deposition. These films spanned the range of + 4 % film-substrate lattice mismatch. A number of experimental characterization techniques, including reflection high energy electron diffraction, atomic force microscopy and transmission electron microscopy were employed to gauge both surface …