FETToy

14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

Resonant Tunneling Diode Simulation with NEGF

18 Aug 2008 | Tools | Contributor(s): Hong-Hyun Park, Zhengping Jiang, Arun Goud Akkala, Sebastian Steiger, Michael Povolotskyi, Tillmann Christoph Kubis, Jean Michel D Sellier, Yaohua Tan, SungGeun Kim, Mathieu Luisier, Samarth Agarwal, Michael McLennan, Gerhard Klimeck, Junzhe Geng

Simulate 1D RTDs using NEGF.

Padre

12 Jan 2006 | Tools | Contributor(s): Mark R. Pinto, kent smith, Muhammad A. Alam, Steven Clark, Xufeng Wang, Gerhard Klimeck, Dragica Vasileska

2D/3D devices under steady state, transient conditions or AC small-signal analysis

Resonant Tunneling Diode Simulator

10 Oct 2005 | Tools | Contributor(s): Michael McLennan

Simulate 1D resonant tunneling devices and other heterostructures via ballistic quantum transport