MIT TFET compact model including the impacts of non-idealities
03 May 2017 | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W
We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.
MIT Virtual Source Negative Capacitance (MVSNC) model
27 Feb 2017 | Contributor(s): Ujwal Radhakrishna, Asif Islam Khan, Sayeef Salahuddin, Dimitri Antoniadis | doi:10.4231/D3K649T9T
MIT Virtual Source Negative FET (MVSNC) model is a compact model for negative capacitance transistors that use a FE-oxide in the gate stack to achieve internal voltage amplification and steep subthreshold swing.
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model
29 Aug 2015 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H
MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
MIT Virtual Source GaNFET-RF ( MVSG-RF) Model
22 Oct 2014 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12
The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.