3D simulator for silicon nanowire field effect transistors with multiple gates
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Selena Zhang onto FET @ 4:34 am on 19 Apr 2024
Study the structure and electronic properties of carbon nanotubes with linear heterojunctions.
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Selena Zhang onto Materials @ 1:43 am on 29 Nov 2023
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the requirement of the semiconductor road map as old devices are reaching their scaling limits. It can be expected to be manufactured in a conventional CMOS process, whereas an ideal silicon-nanowire, although it has better performance, is difficult to manufacture. Simulations with different fin dimensions were done and compared to the ideal nanowire FinFET to analyze their electrical characteristics. As a result, the FinFET device can be the optimal structure with characteristics comparable to the silicon nanowire.
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Selena Zhang onto FET @ 8:03 am on 28 Nov 2023
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Selena Zhang onto Materials @ 8:02 am on 28 Nov 2023
Simulate the nanoscale multigate-FET structures (finFET and nanowire) using drift diffusion approaches
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Selena Zhang onto FET @ 8:02 am on 28 Nov 2023
Simulate resistance change of a Voltage-controlled Memristor
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Selena Zhang onto Materials @ 8:00 am on 28 Nov 2023
Effective-mass / NEGF simulator for electronic transport in Si nanostructures
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Selena Zhang onto FET @ 7:50 am on 28 Nov 2023
Easy-to-use interface for designing and analyzing electronic properties of different nano materials
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Selena Zhang onto Materials @ 7:49 am on 28 Nov 2023
Full-band 3D quantum transport simulation in nanowire structure
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Selena Zhang onto FET @ 7:27 am on 28 Nov 2023
Users can manipulate the parameters of an abstract model of ADHP and analyze the correlation structures that arise (or don’t arise) as a result.
Selena Zhang onto neural @ 6:36 am on 28 Nov 2023
This tool stimulates the pulse or step response of a neural network with ten input and ten output units that are randomly connected.
Selena Zhang onto neural @ 5:48 am on 28 Nov 2023
This tool stimulates the pulse or step response of a single neuron with positive feedback
Selena Zhang onto neural @ 5:47 am on 28 Nov 2023
Simulate 2-D electrons transport in CNTFET
Selena Zhang onto FET @ 3:20 am on 28 Nov 2023
Raman spectroscopy processing for Graphene growth characterization
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Selena Zhang onto Materials @ 7:27 am on 28 Feb 2023
Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.
Selena Zhang onto FET @ 5:42 am on 28 Feb 2023
Simulate density of states, carrier statistics, and carrier concentrations in two-dimensional semiconductors and graphene
1 likes 2 reposts
Selena Zhang onto Materials @ 5:36 am on 28 Feb 2023
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Selena Zhang onto MOS @ 5:05 am on 07 Oct 2022
Simulate Carbon Nanotube field Effect transistor with Schottky Barriers
Selena Zhang onto FET @ 11:43 pm on 08 May 2022
Selena Zhang onto FET @ 11:27 pm on 02 May 2022
Simulation of CNT/GNR FETs including inelastic scattering via virtual probes approach and accounting for the presence of possible Schottky barrier contacts.
Selena Zhang onto FET @ 11:26 pm on 02 May 2022