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Study of the Interface Roughness Models using 3D Finite Element Schrödinger Equation Corrected Monte Carlo Simulator on Nanoscaled FinFET
25 Jan 2016 | Online Presentations | Contributor(s): Daniel Nagy, Muhammad Ali A. Elmessary, Manuel Aldegunde, Karol Kalna
IWCE 2015 presentation. Interface roughness scattering (IRS) is one of the key limiting scattering mechanism for both planar and non-planar CMOS devices. To predict the performance of future scaled devices and new structures the quantum mechanical confinement based IRS models are essential. In this work, the in-house 3D finite element Monte Carlo code with 2D Schrodinger equation based quantum correction serves as a base for implementation of a new multi-subband extended Prange &...
Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
05 Jan 2016 | Online Presentations | Contributor(s): Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental ID-VG characteristics of the 22 nm gate length GAA Si nanowire (NW) with excellent agreement at both low and high drain biases. We then scaled the Si GAA NW according to the ITRS specifications to a gate length of 10 nm. To show the...
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