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Zhizhen Ma onto AgNW Theory
09 Oct 2017
By completing the OMEN Nanowire Lab, users will be able to understand a) the operation of nanowire FETs, b) the effect of bandstructure on the carrier transport in nanowire FETs, and c) the effect of geometry of nanowire on the drain current characteristics in nanowire FETs
The specific objectives of the OMEN Nanowire Lab are:
Users who are new to the concept of nanowire FETs and the simulation methods that are useful for understanding their characteristics should consult the following resources:
Mark Lundstrom, Nanoscale Transistors for a basic understanding on MOS transistors.
Joerg Appenzeller, What Promises do Nanotubes and Nanowires Hold for Future Nanoelectronics Applications?
Monica Taba, Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
Mark Lundstrom and Jing Guo. (2009). Nanoscale Transistors: Device Physics, Modeling and Simulation. New York: Springer. (See especially chapter 5)
Saumitra R. Mehrotra, et al., Threshold voltage
Mark Lundstrom, Subthreshold conduction
First Time User Guide
Supporting Document – Limitation of the Tool at Large Gate Voltage
Mathieu Luisier, et al., Atomistic simulation of nanowires in the sp3d5s* tight-binding formalism: From boundary conditions to strain calculations, Physical Review B 74, 205323, 2006
Mathieu Luisier, Quantum transport beyond the effective mass approximation, ph.D. thesis, ETH, 2007
Mathieu Luisier, Quantum Transport for Nanostructures
Dragica Vasileska, et al., Tight-Binding Bandstructure Calculation Method
Benchmarking Top-of-the-Barrier Model by Abhijeet et al.
First time user guide slide 15-18
OMEN Nanowire Homework Problems
Solutions to Exercises
Solutions to exercises are provided only to instructors!
OMEN Nanowire Test Problems
Users are challenged to integrate what they have learned about OMEN Nanowire Lab in the following module:
solve the challenge