GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
25 Nov 2015 | Online Presentations | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
nanoHUB@SIU: Pedagogy and Beyond
22 Jan 2016 | Online Presentations | Contributor(s): Shaikh S. Ahmed
As a postdoctoral researcher at NCN, during the years 2005-7, in addition to usual research activities, I was tasked with working closely with the nanoHUB Team to augment a few pre-existing quantum device simulators, create rappturized user interfaces, and run end-to-end simulations for...
Examples for QuaMC 2D particle-based device Simulator Tool
0.0 out of 5 stars
10 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
Why QuaMC 2D and Particle-Based Device Simulators?
02 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.
Particle-Based Device Simulators Description
5.0 out of 5 stars
28 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
In this presentation we give an overview of partcle-based device simulations with focus on implementation details.
Modeling Coulomb Effects in Nanoscale Devices
26 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D....