nanoHUB@SIU: Pedagogy and Beyond
22 Jan 2016 | Online Presentations | Contributor(s): Shaikh S. Ahmed
As a postdoctoral researcher at NCN, during the years 2005-7, in addition to usual research activities, I was tasked with working closely with the nanoHUB Team to augment a few pre-existing quantum device simulators, create rappturized user interfaces, and run end-to-end simulations for scientific validation. These routine yet tedious pieces of work consumed quite a bit of my time and often I was dubious about the outcomes. However, these initial doubts of mine began to fade out after I...
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
25 Nov 2015 | Online Presentations | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation.
Multiscale Modeling of Thermoelectric Cooler
17 Dec 2014 | Tools | Contributor(s): Allison Anne Campbell, Mohammad Zunaidur Rashid, afsana sharmin, Shaikh S. Ahmed
This tool simulates a practical thermoelectric cooler unit with atomistic models
Nanoscale Solid-State Lighting Device Simulator
18 May 2012 | Tools | Contributor(s): Shaikh S. Ahmed, Vinay Uday Chimalgi, Katina Mattingly, krishna kumari Yalavarthi
Simulates the electronic and optical properties of nanoscale solid-state lighting devices in III-N material systems
Quantum Point Contact published
02 Feb 2015 | Tools | Contributor(s): Richard Akis, Shaikh S. Ahmed, Mohammad Zunaidur Rashid, Richard Akis
Simulates the conductance and associated wavefunctions of Quantum Point Contacts.
14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
Why QuaMC 2D and Particle-Based Device Simulators?
02 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We describe the need for particle-based device simulators when modeling nanoscale devices.
Examples for QuaMC 2D particle-based device Simulator Tool
10 May 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
We provide three examples that demonstrate the full capabilities of QuaMC 2D for alternative device technologies.
Modeling Coulomb Effects in Nanoscale Devices
26 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D. Vasileska and D. K. Ferry, "A Novel Approach for Introducing the Electron-Electron and Electron-Impurity Interactions in Particle-Based Simulations," IEEE Electron Device Lett. 20, No. 9, pp.463-465 ...
Particle-Based Device Simulators Description
28 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gerhard Klimeck
In this presentation we give an overview of partcle-based device simulations with focus on implementation details.
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures consisting of more than 64 and 52 million atoms, corresponding to volumes of (110 nm)3 and (101 nm)3, respectively. In this part, successful applications of NEMO 3-D are demonstrated in the atomistic ...
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D: Part I − Models and Benchmarks
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Hansang Bae, Steven Clark, Benjamin P Haley, Maxim Naumov, Hoon Ryu, Faisal Saied, marta prada, Marek Korkusinski, Timothy Boykin
Device physics and material science meet at the atomic scale of novel nanostructured semiconductors, and the distinction between new device or new material is blurred. Not only the quantum-mechanical effects in the electronic states of the device but also the granular atomistic representation of the underlying material are important. Approaches based on a continuum representation of the underlying material typically used by device engineers and physicists become invalid. Ab initio methods used ...
13 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Dragica Vasileska
Quantum-corrected Monte-Carlo transport simulator for two-dimensional MOSFET devices.
13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom
Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices
13 Mar 2006 | Tools | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck
Simulates ballistic transport in 2D MOSFET devices
19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Yunfei Gao, Xufeng Wang, Mark Lundstrom
2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs
06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska
Capacitance of a MOS device
30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman
Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)
30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Gokula Kannan, Matteo Mannino, Gerhard Klimeck, Mark Lundstrom, Akira Matsudaira, Junzhe Geng
SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.