FETToy

14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

QuaMC2D

13 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Dragica Vasileska

Quantum-corrected Monte-Carlo transport simulator for two-dimensional MOSFET devices.

CNTFET Lab

13 Mar 2006 | Tools | Contributor(s): Neophytos Neophytou, Shaikh S. Ahmed, Eric Polizzi, Gerhard Klimeck, Mark Lundstrom

Simulates ballistic transport properties in 3D Carbon NanoTube Field Effect Transistor (CNTFET) devices

NanoFET

13 Mar 2006 | Tools | Contributor(s): M. P. Anantram, Shaikh S. Ahmed, Alexei Svizhenko, Derrick Kearney, Gerhard Klimeck

Simulates ballistic transport in 2D MOSFET devices

NanoMOS

19 May 2006 | Tools | Contributor(s): Zhibin Ren, Sebastien Goasguen, Akira Matsudaira, Shaikh S. Ahmed, Kurtis Cantley, Yang Liu, Mark Lundstrom, Xufeng Wang

2-D simulator for thin body (less than 5 nm), fully depleted, double-gated n-MOSFETs

MOSCap

06 Apr 2006 | Tools | Contributor(s): Akira Matsudaira, Saumitra Raj Mehrotra, Shaikh S. Ahmed, Gerhard Klimeck, Dragica Vasileska

Capacitance of a MOS device

MOSFet

30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

Schred

30 Mar 2006 | Tools | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, Matteo Mannino, Gerhard Klimeck, Gokula Kannan, Mark Lundstrom, Akira Matsudaira, Junzhe Geng

SCHRED simulation software calculates the envelope wavefunctions and the corresponding bound-state energies in a typical MOS, SOS and a typical SOI structure.