1. 2D Materials and Graphene: Science to Nanofunctions

   04 Oct 2017 | Online Presentations | Contributor(s): Eric Pop, Saurabh Vinayak Suryavanshi

2. Interconnect, Emerging Logic Switches and Processor Core Energy-Delay Optimization

   04 Oct 2017 | Online Presentations | Contributor(s): Chi-Shuen Lee, Saurabh Vinayak Suryavanshi, H.-S. Philip Wong

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1. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   11 Aug 2018 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D39882Q1F

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

2. 

   Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

   11 Aug 2018 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3F18SH56

   The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model and temperature effects for sub-10 nm 2D FETs.

3. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   04 Apr 2016 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

4. 

   Stanford 2D Semiconductor (S2DS) Transistor Model

   22 Oct 2014 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3QJ78004

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

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