Electronics from the "Bottom Up": An Intel-NCN@Purdue initiative in nanoelectronics education

05 Jul 2007 | Publications | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam

In the 1960’s, a group of leaders from industry and academia, the Semiconductor Electronics Education Committee (SEEC), recognized that the age of vacuum tubes was ending, and that engineers would have to be educated differently if they were to realize the opportunities that the new field …

Multidimensional nanoscale device modeling: the finite element method applied to the non-equilibrium Green's function formalism

31 Oct 2006 | Publications | Contributor(s): Eric Polizzi, Supriyo Datta

This work deals with the modeling and the numerical simulation of quantum transport in multidimensional open nanoscale devices. The electron transport in the device is described using the Non-Equilibrium Green's Functions (NEGF) formalism and the variational form of the problem is solved using the …

Electrical Resistance: an Atomistic View

26 Oct 2006 | Publications | Contributor(s): Supriyo Datta

This tutorial article presents a “bottom-up” view of electrical resistance starting from something really small, like a molecule, and then discussing the issues that arise as we move to bigger conductors. Remark ably enough, no serious quantum mechanics is needed to understand electrical …

A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors

19 Oct 2006 | Publications | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the …

nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs

06 Oct 2006 | Publications | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom

A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space …

Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches

28 Sep 2006 | Publications | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic

In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the …

Towards Multi-Scale Modeling of Carbon Nanotube Transistors

20 Sep 2006 | Publications | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon …

Electrical Conduction through Molecules

08 Jul 2003 | Publications | Contributor(s): Ferdows Zahid, Magnus Paulsson, Supriyo Datta

In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes as well as self-assembled …

Resistance of a Molecule

29 Apr 2003 | Publications | Contributor(s): Magnus Paulsson, Ferdows Zahid, Supriyo Datta

In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Even three-terminal measurements showing evidence of transistor action has been reported using carbon nanotubes [1, 2] as well as …

Theory of Ballistic Nanotransistors

27 Nov 2002 | Publications | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to …