Measurements of Interface Trap Density in MOS Capacitors Using AC Conductance Method
15 Aug 2004 | Presentation Materials | Contributor(s): Benafsha Shahlori
4-H SiC MOS capacitors have a broad interface state density located at approximately 2.9eV above the valence band edge. These states reduce mobility through carrier trapping which in turn affects the electrical performance of these devices. The ac conductance technique is used to measure interface trap density, DIT.