Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | Animations | Contributor(s): Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
Quantitative Modeling and Simulation of Quantum Dots
18 Apr 2011 | Presentation Materials | Contributor(s): Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted as artificial atoms with the potential to be custom tailored to new functionality. In the past decade or so, these nanostructures have attracted significant experimental and theoretical attention in …
NEMO3D User Guide for Quantum Dot Simulations
29 Nov 2011 | Papers | Contributor(s): M. Usman, Gerhard Klimeck
NEMO 3D is a large and complex simulator; and understanding of its source code requires considerable knowledge of quantum mechanics, condensed matter theory, and parallel programming.
Quantum Dot based Photonic Devices
01 Apr 2012 | Online Presentations | Contributor(s): Muhammad Usman
Deployment of nanometer-sized semiconductor quantum dots (QDs) in the active region of
photonic devices such as lasers, semiconductor optical amplifiers (SOA's), photo-detectors etc.
for the next generation communication systems offers unique characteristics such as
temperature-insensitivity, high optical output power, high speed operation, wide-band
characteristics etc.; not commonly attainable in the conventional design approaches. Despite
more than twenty years of research on the electronic …
Atomistic Simulation of Realistically Sized Nanodevices Using NEMO 3-D—Part II: Applications
14 Jan 2008 | Papers | Contributor(s): Gerhard Klimeck, Shaikh S. Ahmed, Neerav Kharche, Marek Korkusinski, Muhammad Usman, marta prada, Timothy Boykin
In part I, the development and deployment of a general nanoelectronic modeling tool (NEMO 3-D) has been discussed. Based on the atomistic valence-force field and the sp3d5s* nearest neighbor tight-binding models, NEMO 3-D enables the computation of strain and electronic structure in nanostructures consisting of more than 64 and 52 million atoms, corresponding to volumes of (110 nm)3 and (101 nm)3, respectively. In this part, successful applications of NEMO 3-D are demonstrated in the atomistic ...